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The quantum dot group is a research group in
the department "Nanophotonics
and ultrafast Electronics" of Institut
d'Electronique Fondamentale. Our group studies semiconductor
self-assembled quantum dots. Self-assembled quantum dots are
semiconductor nanostructures with characteristic dimensions in the
nanometer or tens of nanometers
scale. Self-assembled quantum dots can be formed spontaneously by
growing
lattice mismatched materials like InAs on GaAs or Ge on Si. The physics
and the potential applications of these nanostructures are incredibly
rich.
At the nanometer length scale, the motion of the carriers is governed
by
quantum mechanics and the energy levels are quantized just like atoms
or
molecules. From this point of view [of discrete energy levels],
self-assembled
quantum dots can be considered as artificial atoms inserted into a
solid
matrix. However this picture is limited. The coupling of the carriers
with
the environment like the vibration modes of the crystals, leads to very
specific properties and interaction mechanisms.
Semiconductor quantum dots are potential candidates for several type of optoelectronic devices like long wavelength lasers or midinfrared photodetectors with improved performances as compared to bulk or two-dimensional heterostructures. They are also potential candidates for quantum information processing as single photon sources or support of qubits. Our group studies different aspects related to semiconductor
quantum dots in particular those related to InAs/GaAs quantum dots and
Ge/Si
self-assembled quantum dots : Single quantum dot absorption
nanospectroscopy
Saturable absorption of low-dimensional semiconductors The quantum dot group is part of the SANDiE european network of
excellence, that brings together 32 european leading groups in the
field of self-assembled semiconductor nanostructures. Our group co-organizes JNMO 2010, a recurrent national event 28 setp.-1st oct. 2010 : www.jnmo2010.org Past events |
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